SQS400EN
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
2
1
D u ty Cycle = 0.5
0.2
0.1
Vishay Siliconix
0.1
0.01
0.05
0.02
Single P u lse
10 -4
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
? The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65362 .
S11-2129 Rev. D, 31-Oct-11
6
Document Number: 65362
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQS401EN-T1-GE3 MOSFET P-CH D-S 40V PPAK 1212-8
SSA-LXB102GD LED ARRAY 3MM 10SEG FLAT TOP GRN
SSA-LXB102ID LED ARRAY 3MM 10SEG FLAT TOP RED
SSA-LXB102SRD LED ARRAY 3MM 10SEG FLAT SUP RED
SSA-LXB102YD LED ARRAY 3MM 10SEG FLAT TOP YEL
SSA-LXB10GW-GF/LP LED ARRAY 10X25MM 10SEG GRN DIFF
SSA-LXB10GW LED ARRAY 1.78X5MM 565NM GRN WHT
SSA-LXB10HW-GF LED ARRAY 1.78X5MM 700NM HRD WHT
相关代理商/技术参数
SQS401EN-T1-GE3 功能描述:MOSFET 40V 16A 62.5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQS404EN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 30 V (D-S) 175 ?°C MOSFET
SQS404EN-T1-GE3 制造商:Vishay Semiconductors 功能描述:
SQS420EN-T1-GE3 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 8A 8-Pin PowerPAK 1212 T/R
SQS460EN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQS460EN-T1-GE3 功能描述:MOSFET 60V 8A 39W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQS462EN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQS462EN-T1-GE3 功能描述:MOSFET 60V 8A 33W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube